| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid capable of reducing the polishing speed for conductive metal wirings (particularly copper oxide formed in an interface) represented by copper wirings on a substrate consisting of a barrier layer containing manganese and manganese alloy on its surface, and an insulating layer, and reducing a step between conductive metal wirings and the insulating layer, and to provide a polishing method using the same. <P>SOLUTION: In a chemical mechanical polishing process for a semiconductor device comprising a barrier layer containing manganese and manganese alloy on the surface, conductive metal wirings and an insulating layer, a polishing liquid is for polishing mainly the barrier layer containing manganese and manganese alloy and the insulating layer, and contains colloidal silica particles having a surface indicating a positiveζpotential, a corrosion inhibitor and an oxidizer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
