| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device capable of assuring capacitance, and to provide a method of manufacturing the same. Ž<P>SOLUTION: On a substrate there are formed a C-shaped deep trench capacitor 202 having a cross section parallel to the surface of the substrate that is substantially C-shaped and word lines 206 coupled to a C-shaped deep trench capacitor 202. In a memory device 200, respective memory cells are used in order to provide a capacitance by not only an outer edge but also an inner edge of a C-shaped deep trench capacitor 202. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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