发明名称 Semiconductor memory apparatus capable of reducing ground noise
摘要 An apparatus includes a plurality of first driving signal driving units, and generates a first driving signal by driving an input signal, a plurality of second driving signal driving units, each of which drives an input signal and generates a second driving signal, a timing control unit that controls each of the first driving signal driving units such that a predetermined time difference is generated between an enable timing of the first driving signal and an enable timing of the second driving signal, a plurality of sense amplifier driving units, each of which generates a first driving level and a second driving level according to the first driving signal and the second driving signal, and a plurality of sense amplifiers that are provided for respective bit line pairs, and each include first type switching elements operating according to the first driving level and second type switching elements operating according to the second driving level.
申请公布号 US2009257302(A1) 申请公布日期 2009.10.15
申请号 US20090359623 申请日期 2009.01.26
申请人 HYNIX SEMICONDUCTOR INC, 发明人 JANG CHAE KYU;KIM DONG KEUN
分类号 G11C5/14;G11C7/00;G11C8/00 主分类号 G11C5/14
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