| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To facilitate a mounting process of a semiconductor device having a composite power MOSFET. <P>SOLUTION: In a structure wherein a chip 4C1 having a power MOS circuit section on the high side and a chip 4C2 having a power MOS circuit section on the low side are stored in one sealing body 1, leads 2 to which drain electrodes of the power MOS circuit sections on the high and low sides are connected and made wide, and each of which protrudes asymmetrically from both longer side faces of the sealing body 1. A lead bar section 8c and a chip mounting section 6b are separated from each other, and this can enhance flatness accuracy of a portion of a straight line pattern including the lead bar section 8c and the chip mounting section 6b. Moreover, this can reduce bending of the portion of the straight line pattern due to stress during sealing the chips 4C1 and 4C2, thereby, enabling to prevent the sealing body 1 from being released. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
