发明名称 |
Semiconductor device with trench transistors and method for manufacturing such a device |
摘要 |
According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.
|
申请公布号 |
US7601596(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20060600422 |
申请日期 |
2006.11.16 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
ZUNDEL MARKUS;HIRLER FRANZ;ZELSACHER RUDOLF;BACHER ERWIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|