| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to etching in a vacuum through magnetron sputtering. The method involves sputtering a metal strip (2), moving over at least one counter electrode (3,3',7) made from conducting material in a vacuum chamber (1), in which plasma is formed in the gas near the metal strip (2) so as to form radicals and/or ions which act on this metal strip (2). A holding magnetic circuit (4) is placed above the metal strip (2). The counter electrode (3,3',7) contains a movable surface, which is moved through rotation and/or translational motion relative the metal strip (2). The said surface is moved during etching and is continuously cleaned using a cleaning device (5, 5', 10), mounted beyond the limits of the plasma before repeated effect of the plasma. ^ EFFECT: higher quality and efficiency of etching in a continuous process. ^ 17 cl, 3 dwg |
