| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a display device having superior display properties capable of obtaining a thin film transistor, wherein crystallinity in a channel length direction in a channel region is uniformized, without increasing parasitic capacitance by expanding the electrode width of a gate electrode, thereby brightness variations of a light emitting element connected to the thin film transistor are prevented. Ž<P>SOLUTION: This manufacturing method of the display device includes a process wherein a gate electrode 14a is formed on a glass substrate 1, a process wherein a gate insulating film 31 and an amorphous semiconductor thin film 32 are film-formed in this order over the glass substrate 1 under the condition of covering the gate electrode 14, and a process wherein a laser beam Lh is irradiated on the semiconductor thin film 32 at least above the gate electrode 14a while scanning in an extending direction of the gate electrode 14a to crystallize the semiconductor thin film 32, thereby a plurality of thin film transistors are formed on the glass substrate 1. Further, a plurality of light emitting elements connected to each thin film transistor are formed on the glass substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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