| 摘要 |
PURPOSE: A group III nitride based semiconductor light emitting diode having a vertical structure and a manufacturing method thereof are provided to separate a light emitting structure for a light emitting diode from a growth substrate without thermal and mechanical damage. CONSTITUTION: A group III nitride based semiconductor light emitting diode having a vertical structure includes an n-type ohmic contact electrode structure(406), a light emitting structure(402), a p-type ohmic contact electrode layer, a first device passivation layer, a reflective ohmic contact electrode layer, a conductive wafer bonding layer, a second device passivation layer, a heat sink supporting bar(403), a p-type ohmic contact electrode structure, and a die bonding layer. The light emitting structure comprises an n-type nitride based clad layer, a nitride based active layer, and a p-type nitride based clad layer. The p-type ohmic contact electrode layer and the first device passivation layer include a current blocking region formed in a bottom surface of the light emitting structure. The reflective ohmic contact electrode layer is formed in a bottom surface of the p-type ohmic contact electrode layer and the first device passivation layer. The conductive wafer bonding layer is formed in a bottom surface of the reflective ohmic contact electrode layer. The second device passivation layer surrounds the light emitting structure, the p-type ohmic contact electrode layer, the first device passivation layer, the reflective ohmic contact electrode layer, and the conductive wafer bonding layer. The heat sink supporting bar is formed in a bottom surface of the conductive wafer bonding layer, and has a laminate structure. The p-type ohmic contact electrode structure and the die bonding layer are formed in a bottom surface of the heat sink supporting bar of the laminate structure. |
