| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide wafer, can significantly enhance the reverse breakdown voltage, when it is applied to a Schottky barrier diode (SBD). SOLUTION: In the silicon carbide wafer, obtained by allowing the epitaxial film of a cubic silicon carbide on the surface of a cubic silicon carbide substrate, the concentration of the dopant contained in the epitaxial film is made to be equal to or lower than 3×10<SP>15</SP>atoms/cm<SP>3</SP>, the thickness of the epitaxial film is set to 20μm or larger, and the surface roughness of the epitaxial film is set to 3 nm or smaller by arithmetic mean roughness (Ra), in a region which is 10 squareμm. COPYRIGHT: (C)2010,JPO&INPIT |
