发明名称 IMAGE SENSOR AND IMAGE SENSOR MANUFACTURING METHOD
摘要 In an upper waveguide structure (14), a width (W1) of the upper portion is larger than a width (W2) of the lower portion. The upper waveguide structure (14) has a side face (14a) which obliquely extends from an edge portion (14b) of the upper face to an edge portion (14c) of the lower face to come close to a normal (PA1) passing through the center of a light receiving surface (2a) of a photoelectric conversion unit (2). A gap (11) in the air gap structure (AG1) is formed by etching a first insulating layer (4a l: see FIG. 4A) serving as a first interlayer dielectric film (4a) so as to expose not an inner region (2a1) but an outer region (2a2) on the light receiving surface (2a) of the photoelectric conversion unit (2).
申请公布号 US2009250777(A1) 申请公布日期 2009.10.08
申请号 US20090413141 申请日期 2009.03.27
申请人 CANON KABUSHIKI KAISHA 发明人 TAKAMIYA MAKOTO
分类号 H01L31/0232;H01L27/14;H04N5/335;H04N5/369 主分类号 H01L31/0232
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