| 摘要 |
The thermal-type infrared solid-state imaging device comprises a infrared detector having at least a substrate provided with an integrated circuit for reading out a signal, a diaphragm for detecting a temperature change by absorbing infrared rays, and a support section for supporting the diaphragm above a surface of one side of the substrate with space in between, and includes an eaves section connected to a connection area provided in the vicinity of outer circumference of the diaphragm and covering at least components other than the diaphragm across a space and transmitting the heat generated by absorbing incident infrared rays to the diaphragm, wherein the eaves section has the thickness of a first region covering the components other than the diaphragm across a space thicker than the thicknesses of a second region contacting the connection area of the diaphragm and a third region rising upward in mid air from the diaphragm.
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