发明名称 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME
摘要 Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.
申请公布号 US2009246685(A1) 申请公布日期 2009.10.01
申请号 US20090410881 申请日期 2009.03.25
申请人 FUJIFILM CORPORATION 发明人 YAMASHITA KATSUHIRO
分类号 G03F7/20;G03F7/004 主分类号 G03F7/20
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