| 摘要 |
<p>Disclosed is a traveling-wave semiconductor optical phase modulator having an improved n-SI-i-n multilayer structure, which can be driven at high speed/low voltage. Specifically disclosed is a waveguide-type semiconductor optical modulator characterized by comprising a semiconductor substrate (101), a first n-type cladding layer (103) and a second n-type cladding layer (108) formed on the semiconductor substrate (101), and an undoped optical waveguide core layer (104) and an electron trapping layer (107) formed between the first n-type cladding layer (103) and the second n-type cladding layer (108). The waveguide-type semiconductor optical modulator is also characterized in that a hole supply layer (106) is formed between the undoped optical waveguide core layer (104) and the electron trapping layer (107).</p> |
