发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of reducing product cost, saving maintenance power, and promoting the shortening of time. Ž<P>SOLUTION: The substrate treatment apparatus comprises: a treatment chamber 11 for treating a substrate W treated by a plurality of gases; a gas introduction section 12 for introducing the plurality of gases into the treatment chamber 11 while the gas introduction section 12 is provided in the treatment chamber 11; and an inlet block 13 that is arranged on the treatment chamber 11 and has a plurality of gas channels 13b for guiding the plurality of gases from a gas supply mechanism 14 to the gas introduction section and a heater 23 for heating gas flowing in at least one of the gas channels. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009224590(A) 申请公布日期 2009.10.01
申请号 JP20080067997 申请日期 2008.03.17
申请人 TOKYO ELECTRON LTD 发明人 TSUDA EINOSUKE
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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