发明名称 NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING
摘要 The present disclosure includes methods, devices, modules, and systems for programming multilevel non-volatile memory cells, each cell having a number of lower pages and an upper page,. One method includes programming a first lower page, programming a second lower page, programming a third lower page, programming an upper page, and reprogramming the upper page of a cell.
申请公布号 KR20090102836(A) 申请公布日期 2009.09.30
申请号 KR20097015748 申请日期 2007.12.13
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C16/10;G11C16/04 主分类号 G11C16/10
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