发明名称 WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS
摘要 PURPOSE: A wafer processing method and wafer processing apparatus are provided to reduce the surface roughness of a wafer and to improve the gettering effect. CONSTITUTION: Devices are formed on the front side of the wafer(20). The wafer is griped to expose the rear side of a wafer. The rear side of a wafer is grinded to form the cracking layer on the rear side. The rear side of a wafer is polished to leave the cracking layer partially. In the polishing step, the outermost layer of the rear side of a wafer is removed.
申请公布号 KR20090102619(A) 申请公布日期 2009.09.30
申请号 KR20080129606 申请日期 2008.12.18
申请人 TOKYO SEIMITSU CO., LTD. 发明人 KANAZAWA MASAYUKI;HAYASHI TOMOO;ARISA SHIGEHARU
分类号 H01L21/304;B24B1/00 主分类号 H01L21/304
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