| 摘要 |
PURPOSE: An etching method and manufacturing method of semiconductor device are provided to prevent the silicon substrate from being oxidized. CONSTITUTION: The silicon oxide film and the polysilicon layer(37) and the mask film(38) having the opening are formed on the silicon substrate. The etching method has the etching step of polysilicon layer. In the polysilicon layer etching step, the polysilicon layer corresponding to an opening is etched by plasma. The process gas includes the oxygen gas. In the etching step of polysilicon layer, the pressure of an atmosphere is set up as 6.7 Pa ~, 33.3 Pa. In the etching step of polysilicon layer, the polysilicon layer corresponding to an opening is etched by the 13.56 MHz frequency of the bias voltage for introducing the plasma to a substrate.
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