发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
The semiconductor device includes a first semiconductor chip having first electrodes on a fringe region of a main surface thereof, and a second semiconductor chip smaller in area than the first semiconductor chip and having second electrodes on a main surface thereof. The first semiconductor chip and the second semiconductor chip are connected together by bonding a surface of the second semiconductor chip that is opposite to the main surface thereof to a region of the main surface of the first semiconductor chip other than the fringe region. The first electrodes are connected to the second electrodes by wirings formed over the main surface of the first semiconductor chip, a side surface of the second semiconductor chip and the main surface of the second semiconductor chip.
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申请公布号 |
US7595222(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20050057195 |
申请日期 |
2005.02.15 |
申请人 |
PANASONIC CORPORATION |
发明人 |
SHIMOISHIZAKA NOZOMI;FUKUDA TOSHIYUKI |
分类号 |
H01L21/00;H01L21/60;H01L23/31;H01L25/065;H01L29/06 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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