METHOD OF FORMING FIELD EFFECT TRANSISTORS HAVING SILICIDED SOURCE/DRAIN CONTACTS WITH LOW CONTACT RESISTANCE

摘要

PURPOSE: A method for forming a field effect transistor with a silicide source/drain contact of a low contact resistor is provided to obtain low susceptibility about the silicide agglomeration. CONSTITUTION: A field effect transistor with a P type source/drain region is formed in a semiconductor substrate(102). A diffusion barrier layer is formed on the source/drain region(104). The silicon nitride is formed on at least part of the diffusion barrier layer extended to the opposite side to the source/drain region(106). The hydrogen is remove from the silicon nitride layer by exposing the silicon nitride layer to the ultraviolet irradiation(108).