发明名称 Logic process DRAM
摘要 An integrated circuit device comprises a plurality of bit line pairs. First and second bit lines are aligned with each other in an end-to-end arrangement. The first and second bit lines are arranged consecutively adjacent to one another, respectively. A plurality of word lines is associated with the first bit lines and the second bit lines. A first array includes the first bit lines and first associated ones of the plurality of word lines, and wherein a second array includes the second bit lines and second ones of the plurality of associated word lines. A first plurality of multiplexers communicates with two adjacent bits lines within one of the first and second arrays. The first array operates as a sense array and the second array operates as a reference array when at least one of the plurality of word lines is active in the first array.
申请公布号 US7596011(B1) 申请公布日期 2009.09.29
申请号 US20070710818 申请日期 2007.02.26
申请人 MARVELL INTERNATIONAL LTD. 发明人 LEE WINSTON;LEE PETER;SUTARDJA SEHAT
分类号 G11C5/06 主分类号 G11C5/06
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