VERTICAL SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND CRYSTAL-DEFECT EVALUATION METHOD OF VERTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To rapidly evaluate a crystal defect occurring in a manufacturing process. SOLUTION: A vertical IGBT 10 comprises a semiconductor substrate 30, a collector electrode 40 coating the rear surface 30B of the semiconductor substrate 30, and an emitter electrode 20 coating the front surface 30U of the semiconductor substrate 30. The emitter electrode 20 has a window 50 which transmits the electron beam and the laser beam. The window 50 is arranged at a part of an area where a collector region 31 exists in the vertical direction of the main surface of the semiconductor substrate 30. COPYRIGHT: (C)2009,JPO&INPIT