发明名称 SOLID-STATE IMAGING DEVICE, AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device reduced in an obliquely-entering component entering a photoelectric conversion region, and suppressed in degradation of an image due to the occurrence of smear, and to provide manufacturing method of the same. SOLUTION: This solid-state imaging device is provided with: a semiconductor substrate 1 with photoelectric conversion regions 2 formed thereon; first microlenses 9 formed above the semiconductor substrate 1 to cover the photoelectric conversion regions 2, condensing external light on the photoelectric conversion regions 2 and having a convex upper surface; and second microlenses 13a formed above the first microlenses 9, condensing the external light on the first microlenses 9 and having a convex upper surface. Flat surfaces 16 are formed in regions being top parts of one side of the first microlenses 9 and the second microlenses 13a, and located directly above the photoelectric conversion regions 2. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009218341(A) 申请公布日期 2009.09.24
申请号 JP20080059434 申请日期 2008.03.10
申请人 PANASONIC CORP 发明人 MATSUSHITA YOSHIHIRO
分类号 H01L27/14;G02B3/00;H01L31/0232;H04N5/335;H04N5/359 主分类号 H01L27/14
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