METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMI-CONDUCTOR CHIPS AND OPTOELECTRONIC SEMI-CONDUCTOR CHIP

摘要

The invention relates to a method for producing a plurality of optoelectronic semi-conductor chips having buried p-sides, comprising  the following steps: a) producing a wafer (1, 2, 3) having a semi-conductor layer sequence (100, 200, 300), which comprises an n-doped layer (12, 22, 32), an active layer (13, 23, 33) and a p-doped layer (14, 24, 34), wherein the active layer is disposed between the n-doped layer and the p-doped layer and the p-doped layer is exposed, b) electrically activating the acceptors in the exposed p-doped layer (14, 24, 34) by a thermal activation method, c) covering the p-doped layer (14, 24, 34), and d) dicing the wafer (1, 2 3) into a plurality of optoelectronic semi-conductor chips.