| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has reduced defects of an external appearance such as cracking, chapping, and chipping due to external stress, and to improve the manufacture yield of a semiconductor device which is made thin. SOLUTION: The semiconductor device 112 has a substrate 109, a semiconductor integrated circuit portion 101 provided on one surface of the substrate, and a resin layer 110 continuously covering the other surface and a side surface of the substrate and side surfaces of semiconductor integrated circuit portions. A semiconductor integrated circuit portion formation surface of the substrate where the plurality of semiconductor integrated circuit portions are formed, and a fixed substrate are fixed with wax, and the substrate is parted for each of the semiconductor integrated circuit portions. A resin layer is formed covering the substrate where the individually parted semiconductor integrated circuit portions are formed. COPYRIGHT: (C)2009,JPO&INPIT
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