| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire which has sufficient joint strength between the bonding wire and an electrode on a semiconductor element, hardly suffers from a failure because of contact between bonding wires when sealing the element with resin, does not have excessively large ball hardness, does not have a crack on a chip and has sufficient fatigue characteristics against vibration. <P>SOLUTION: The bonding wire contains 0.0001 to 0.01 mass% Sn, 0.8 to 2 mass% Pt, and 0.0001 to 0.1 mass% one or more selected from a group including Ca, Be, Ge, rare earth elements, Sr, Ba, In and Ti, and contains the remaining of Au and unavoidable impurities. The wire may further contain 0.05 to 1.5 mass% Cu. <P>COPYRIGHT: (C)2009,JPO&INPIT |
