| 摘要 |
PROBLEM TO BE SOLVED: To suppress a damage to the edge of a first gate insulation film. SOLUTION: The device includes a substrate, a first gate insulation film formed on the substrate, a charge storage layer formed on the first gate insulation film, a second gate insulation film formed on the charge storage layer, and a gate electrode formed on the second gate insulation film. The width between side surfaces of the second gate insulation film is smaller than the width between side surfaces of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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