EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer having a structure of an optimum p-type layer capable of further improving an optical output and forming a favorable ohmic electrode.

SOLUTION: The epitaxial wafer has at least a substrate, and an n-type layer formed on the substrate by an epitaxial growth and a p-type layer on the n-type layer. The n-type layer and the p-type layer are GaAsP or GaP, and the p-type layer has at least a first p-type layer and a second p-type layer over the first p-type layer. The carrier density of the first p-type layer of the epitaxial wafer is 5×1016to 3×1017/cm3, and the carrier density of the second p-type layer of the epitaxial wafer is 7×1018to 3×1019/cm3.

COPYRIGHT: (C)2009,JPO&INPIT