| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device for highly accurately forming a pattern including a minute line and space pattern. <P>SOLUTION: The method of fabricating the semiconductor device includes a step for forming a core material 4 on a film to be processed (workpiece) 1, a step for forming a second film (coating film) 5 so as to cover the upper and side faces of the core material 4, a step for removing the core material 4 after forming the second film 5, a step for, after removing the core material 4, removing the second film 5 while leaving portions thereof located on the side faces of the core material 4, so as to form sidewall spacer masks 7, and a step for etching the film 1 to be processed by using the sidewall spacer masks 7 as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
