| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a resist pattern into a predetermined target size even when a substrate includes resist patterns of different densities. <P>SOLUTION: Photography processing is performed on a wafer to be inspected to form resist patterns of different densities. Each size of the resist patterns is measured by a pattern size measuring apparatus and output the results of the measurement is output by a controlling section (Step S1). The controlling section calculates correction value of a heating temperature in a post exposure baking (PEB) device on the basis of the results of the measurement of the size of dense resist patterns (Step S2). Correction values of developer temperature or discharge period of developer in a developing device is calculated on the basis of the measurement of the size of thin resist patterns (Step S3). These results of the calculation are output by the PEB device and the developing device to change processing conditions of respective devices (Step S4). <P>COPYRIGHT: (C)2009,JPO&INPIT |
