| 摘要 |
<p>An overlay vernier of semiconductor device and method for fabricating semiconductor device are provided to improve the accuracy of overlay by a daughter vernier rotating at 45 degree to the lattice pattern of the mother vernier. The overlay vernier is formed in the scribe lane region of substrate. The mother vernier(350) is formed with the lattice pattern in which a plurality of line perpendicularly intersects with space patterns. The daughter vernier(360) is formed with the same lattice pattern as the mother vernier and has an angle predetermined rotation angle. The cross point of the line pattern of the daughter vernier is overlapped with the cross point of the line pattern of the mother vernier.</p> |
