| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve photosensitivity by inducing a light emitted through a gap between micro lenses to a photo diode. At least one photo diode(120) is formed on a semiconductor substrate(100). A gap fill insulation film(170) is formed on a top part of each photo diode. An interlayer insulation film(140) is formed in both sides of the gap fill insulation film. A photo induction film(164) is formed on a top part of the photo diode between the gap fill insulation film and the interlayer insulation film. A passivation layer(162) is connected to the photo induction film, and is formed on a top part of the interlayer insulation film. A color filter(180) is formed on a front surface of the passivation layer and the gap fill insulation film, and corresponds to each photo diode.
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