发明名称 |
GAN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, AND IMAGE DISPLAY APPARATUS |
摘要 |
A GaN-based semiconductor light-emitting element (1) includes (A) a first GaN-based compound semiconductor layer (21) of n-conductivity type, (B) an active layer (23), (C) a second GaN-based compound semiconductor layer (22) of p-conductivity type, (D) a first electrode (31) electrically connected to the first GaN-based compound semiconductor layer (21), (E) a second electrode (32) electrically connected to the second GaN-based compound semiconductor layer (22), (F) an impurity diffusion-preventing layer (24) composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer (24) preventing a p-type impurity from diffusing into the active layer, and (G) a laminated structure (40) or a third GaN-based compound semiconductor layer (50) of p-conductivity type. The impurity diffusion-preventing layer (24) and the laminated structure (40) or the third GaN-based compound semiconductor layer (50) of p-conductivity type are disposed, between the active layer (23) and the second GaN-based compound semiconductor layer (22), in that order from the active layer side. |
申请公布号 |
EP2101362(A2) |
申请公布日期 |
2009.09.16 |
申请号 |
EP20090003488 |
申请日期 |
2009.03.10 |
申请人 |
SONY CORPORATION |
发明人 |
NAITO, HIROKI;OKUYAMA, HIROYUKI;BIWA, GOSHI;NISHINAKA, IPPEI |
分类号 |
H01L33/32;G02F1/13357;G03B21/14;H01L33/02;H01L33/04;H01L33/06;H01L33/12;H01L33/14 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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