| 摘要 |
PROBLEM TO BE SOLVED: To nondestructively measure the thickness of a thin film formed in the bottom of a through-hole in manufacturing processes of through electrodes of layered three-dimensional semiconductor devices. SOLUTION: A film thickness measuring apparatus 100 includes a light source part for changing over between illumination light of a first wavelength and illumination light of a second wavelength; a photo-detector 19 for detecting reflected light reflected by a sample 30 and acquiring images of a prescribed region of the sample 30; a confocal optical system for guiding illumination light from the light source part to the sample 30 and guiding reflected light from the sample 30 to the photo-detector 19; and a processing part 20 for determining measurement data of reflectances to the first wavelength and the second wavelength on the basis of a first image based on light of the first wavelength and a second image based on light of the second wavelength for computing the film thickness of the thin film. The processing part 20 makes reference to computation data indicating the relation between the wavelengths and the reflectances for each film thickness of the thin film, approximates the film thickness of the thin film on the basis of the measurement data, and computes it. COPYRIGHT: (C)2009,JPO&INPIT |
