| 摘要 |
A method of forming a step edge in a surface 12 of a crystalline substrate 10, comprising the steps of forming a layer of resist 11 over the surface 12 and removing areas of the resist 11 to expose selected areas of the surface 12, thereby forming side walls 13 in the layer of the resist 11, the side walls 13 bounding the exposed areas of the surface 12. The method further comprises exposing the resist 11 and substrate 10 to an ion beam 14, thereby etching the resist 11 and the exposed areas of the surface 12, and controlling the orientation and angle of incidence of the ion beam 14 which respect to the substrate 10 and the resist side walls 13 to form a step edge with desired angle and height characteristics. An angular position of the substrate 10 about an axis 15 formed by a normal to the surface 12 is controlled in order to control the step edge formation. |
