发明名称 SILICEOUS FILM FORMING METHOD AND SILICEOUS FILM FORMED THEREBY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of forming a siliceous film containing a low concentration of nitrogen. <P>SOLUTION: The siliceous film forming method includes the steps of: forming a coating film by coating an irregular substrate surface with a polysilazane composition; hardening only a part of the coating film that is adjacent to the substrate surface, of the coating film, to thereby form a coating thin film running along the shape of the irregular substrate; and removing a polysilazane composition remaining unhardened during the coating thin film forming step, of the coating film. The siliceous films that are formed by this method can be plurally laminated. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009206440(A) 申请公布日期 2009.09.10
申请号 JP20080049906 申请日期 2008.02.29
申请人 AZ ELECTRONIC MATERIALS KK 发明人 NAGAHARA TATSURO;HAYASHI MASANOBU
分类号 H01L21/76;H01L21/316 主分类号 H01L21/76
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