| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device improving reliability as an anti-fuse element without adding excessive circuits or changing the process. <P>SOLUTION: The semiconductor device comprises an active region 2 formed on a semiconductor substrate 10, and a gate electrode 1 formed on the active region 2 via a gate insulating film 4 formed on the surface of the active region 2. The gate electrode 1 is formed on the gate insulating film 4 so that a peripheral portion of the gate electrode 1 and a peripheral portion of the active region 2 overlap each other at a position where the active region 2 is not divided by the gate electrode 1, thus forming an overlap region 3. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
