Local charge carrier lifetime determining method for e.g. partially processed solar cell in photovoltaic technology, involves determining value of local charge carrier lifetime for partial surfaces of semiconductor structure

摘要

The method involves producing excess charge carriers in a semiconductor structure e.g. silicon wafer (1), within a given excitation time interval. Measuring values are determined for partial surfaces of the semiconductor structure by integration of measuring signals within time sub intervals, respectively, where the signals are dependent on concentration of the excess charge carriers, and one of the intervals ends before another interval. A value of a local charge carrier lifetime is determined for the surfaces of the structure by in-relation setting of the measuring values. An independent claim is also included for a device for space-resolved determination of local charge carrier lifetime in a semiconductor structure.