METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE

摘要

A method for fabricating a semiconductor memory device is provided to prevent the oxidation of a bit line by performing annealing in a steam/hydrogen partial pressure region at a certain temperature after coating an SOD film of which cap-fill characteristic is excellent when forming an inter-layer insulating film so that the reliability of the device may be improved. A bit line is formed on a semiconductor substrate on which a lower structure is formed, and an SOD(Spin On Dielectric) film is formed on the result on which the bit line is formed. The SOD film is heat-treated at 600-1100 °C. The heat-treatment is progressed based on a rapid thermal processing method, and the bit line is made of metal.