发明名称 |
Antireflection film composition, substrate, and patterning process |
摘要 |
There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
|
申请公布号 |
US7585613(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20070653839 |
申请日期 |
2007.01.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;IWABUCHI MOTOAKI;ASANO TAKESHI;UEDA TAKAFUMI |
分类号 |
G03F7/11 |
主分类号 |
G03F7/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|