| 摘要 |
On a TFT substrate, gate bus lines, data bus lines, picture element electrodes, and the like are formed, and further a first alignment film is formed of polyimide or the like. On an opposing substrate, black matrices, common electrodes, and the like formed; and further column-like spacers are formed at positions facing regions where the gate bus lines and the data bus lines cross. A second alignment film covering the surfaces of the common electrode and the spacers is formed. However, the first and second alignment films are maintained semi-setting. Thereafter, the TFT substrate and the opposing substrate are overlapped, and heated at high temperature under pressure; and the second alignment film on the apexes of the spacers and the first alignment film on the TFT substrate side are joined.
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