| 摘要 |
A device for detecting electrical properties of a sample composed of an excitable material, in particular of a silicon wafer, comprises a microwave source (6) for generating a microwave field, a resonance system (2), which is coupled to the microwave source (6) in a microwave-transmitting manner and which has a microwave resonator having at least one opening (26) and a sample to be examined and arranged adjacent to the at least one opening, at least one excitation source (3) arranged in the vicinity of the sample and serving for the controlled electrical excitation of the sample, and a measuring device (5) for measuring at least one physical parameter of the resonance system (2).
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