| 摘要 |
The present invention relates to a semiconductor substrate comprising at least first and second device regions. The first device region has a substantially planar surface oriented along one of a first set of equivalent crystal planes, and the second device region contains a protruding semiconductor structure having multiple intercepting surfaces oriented along a second, different set of equivalent crystal planes. A semiconductor device structure can be formed using such a semiconductor substrate. Specifically, a first field effect transistor (FET) can be formed at the first device region, which comprises a channel that extends along the substantially planar surface of the first device region. A second, complementary FET can be formed at the second device region, while the second, complementary FET comprises a channel that extends along the multiple intercepting surfaces of the protruding semiconductor structure at the second device region.
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