发明名称 WAFER PROCESSING METHOD FOR PROCESSING WAFER HAVING BUMPS FORMED THEREON
摘要 <p>A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region- conforming member up to a thickness equal to or greater than that of the bump region- conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground. As a result, a change in the size of the bumps can be easily accommodated without creating clearance.</p>
申请公布号 SG154390(A1) 申请公布日期 2009.08.28
申请号 SG20080095093 申请日期 2008.12.22
申请人 TOKYO SEIMITSU CO., LTD. 发明人 KANAZAWA MASAKI;AKAHORI HAJIME
分类号 (IPC1-7):H01L23/02;H01L21/00 主分类号 (IPC1-7):H01L23/02
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