发明名称 |
METHOD FOR CLEANING THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for cleaning a thin film forming apparatus, a thin film forming method and a thin film forming apparatus, that can suppress particle generation and improve productivity. <P>SOLUTION: A control part 100 of a heat treatment apparatus 1 executes more than once a film forming process of forming a thin film by supplying a film forming gas containing hexachlorodisilane and ammonia to semiconductor wafers W. The control part 100 further executes a cleaning process of cleaning the interior of the heat treatment apparatus 1 by supplying a cleaning gas into a reaction tube 2 before executing the process in which the cumulative film thickness of silicon nitride films formed on semiconductor wafers W by the film forming process exceeds 1.5μm. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009194391(A) |
申请公布日期 |
2009.08.27 |
申请号 |
JP20090091875 |
申请日期 |
2009.04.06 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
NORO NAOTAKA;TONEGAWA YAMATO;FUJITA TAKEHIKO;KIMURA NORIFUMI;HASEBE KAZUHIDE;NODERA NOBUTAKE |
分类号 |
H01L21/31;C23C16/44;H01L21/3065 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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