发明名称 METHOD FOR CLEANING THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for cleaning a thin film forming apparatus, a thin film forming method and a thin film forming apparatus, that can suppress particle generation and improve productivity. <P>SOLUTION: A control part 100 of a heat treatment apparatus 1 executes more than once a film forming process of forming a thin film by supplying a film forming gas containing hexachlorodisilane and ammonia to semiconductor wafers W. The control part 100 further executes a cleaning process of cleaning the interior of the heat treatment apparatus 1 by supplying a cleaning gas into a reaction tube 2 before executing the process in which the cumulative film thickness of silicon nitride films formed on semiconductor wafers W by the film forming process exceeds 1.5μm. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009194391(A) 申请公布日期 2009.08.27
申请号 JP20090091875 申请日期 2009.04.06
申请人 TOKYO ELECTRON LTD 发明人 NORO NAOTAKA;TONEGAWA YAMATO;FUJITA TAKEHIKO;KIMURA NORIFUMI;HASEBE KAZUHIDE;NODERA NOBUTAKE
分类号 H01L21/31;C23C16/44;H01L21/3065 主分类号 H01L21/31
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