发明名称 |
PROCESSING APPARATUS USING SOURCE GAS AND REACTIVE GAS |
摘要 |
The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum. The processing apparatus further includes: a source gas by-pass line (62) that selectively feeds the source gas into the vacuum evacuating system with the source gas bypassing the processing vessel; and a reactive gas by-pass line that selectively feeds the reactive gas to the vacuum evacuating system with the reactive gas bypassing the processing vessel. The source gas by-pass line (62) has a source gas escape prevention valve (X1) that prevents an escape of the source gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition. The reactive gas by-pass line (66) has a reactive gas escape prevention valve (Y1) that prevents an escape of the reactive gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition.
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申请公布号 |
US2009211526(A1) |
申请公布日期 |
2009.08.27 |
申请号 |
US20090434978 |
申请日期 |
2009.05.04 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TANAKA MASAYUKI;KAI KOUZO;MURAKAMI SEISHI;MIYASHITA TETSUYA |
分类号 |
C23C16/455;C23C16/54;C23C16/44;H01L21/285 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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