| 摘要 |
An apparatus and a method for processing substrate are provided to secure a step coverage by preventing high electrical resistance on a metal line. In an apparatus and a method for processing a substrate, a chamber(10) provides a process space to the substrate(W). Plasma sources(16,18) produce a radical from a first source gas, and a second supply member is positioned at the lower part of the first supply member. A support plate(20) is installed within the chamber, and the supply nozzle supplies a second source gas. The upper chamber(14) opens and closes the top of the lower chamber(12) in which the top is open.
|
