MANUFACTURING METHOD OF SEMICONDUCTOR FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF ELECTRONIC APPARATUS, SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide film (semiconductor film) improved in characteristics. SOLUTION: The manufacturing method of the semiconductor film includes: a first process of forming a first silicon carbide film 3 on a silicon film by supplying a carbon source gas onto the first silicon film S1; a second process of forming a second silicon film 5 on the first carbon silicon film; a third process of irradiating the second silicon film with laser beams; and a fourth process of forming a second silicon carbide film by supplying a carbon source gas and a silicon source gas onto the first silicon carbide film after the third process. By this method, the first silicon carbide film 3 can be reformed through the irradiation of the laser beams to improve characteristics of the second silicon film grown on the film. COPYRIGHT: (C)2009,JPO&INPIT