| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of simplifying a configuration and reducing a manufacturing cost, and moreover, preventing the inflow of reaction gas, etc., among a plurality of sputtering chambers varying in sputtering atmospheres, and reliably performing atmosphere separation, and a film deposition method. SOLUTION: An atmosphere separation section 40 is formed between the adjacent sputtering chambers 13, 14, and the section perpendicular to a conveyance direction of a substrate W in the atmosphere separation section 40 is formed smaller than the section perpendicular to the conveyance direction of the substrate W in the adjacent sputtering chambers 13, 14. The atmosphere separation section 40 is provided with a plurality of gas discharge sections 42 for discharging the inert gas used in the adjacent sputtering chambers 13, 14, and is provided with an exhaust means for performing exhaust of the adjacent sputtering chambers 13, 14 on the opposite side of the atmosphere separation section 40 across the adjacent sputtering chambers 13, 14 in-between. COPYRIGHT: (C)2009,JPO&INPIT
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