| 摘要 |
A semiconductor device comprises a charge pumping circuit including plural stages of circuit portions connected in series. Each circuit portion has a transistor having a drain and gate connected to each other and a capacitor having a connection node at which one electrode of the capacitor is connected to the drain of the transistor in such a way that potentials to be applied to adjoining connection nodes of individual capacitors alternately attain a high level and a low level when the charge-pumping circuit is operating. When the charge-pumping circuit stops operating, each of the potentials of the connection nodes of the individual capacitors is fixed at a high level if an output voltage of the charge-pumping circuit is positive.
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