摘要 |
<p>Provided are a semiconductor element module which is excellent in terms of thermal connection and electric connection, the cooling performance of which can be fully secured, and which is highly reliable, and a method for manufacturing the same. The semiconductor element module comprises an IGBT (2) and a diode (3) on both surfaces of which an electrode is formed, a ceramic substrate (7) on the surface of which wiring circuit layers (4, 5) which are bonded to one surface of the IGBT (2) and the diode (3) are formed and the thermal conductivity of which is high, a ceramic substrate (8) on the surface of which a wiring circuit layer (6) which is bonded to the other surfaces of the IGBT (2) and the diode (3) is formed and the thermal conductivity of which is high, and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) and with which the inside is sealed. These members are bonded by an ordinary temperature bonding method.</p> |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD.;UENO, DAISHI;WADA, TARO;FUNAYAMA, MASAHIRO;KURODA, YOSHIKATSU;KONDO, YUICHI;KOBAYASHI, SHINICHI;NAKANO, KOJI;FUJIWARA, KENJI;TAKESHITA, TERUO |
发明人 |
UENO, DAISHI;WADA, TARO;FUNAYAMA, MASAHIRO;KURODA, YOSHIKATSU;KONDO, YUICHI;KOBAYASHI, SHINICHI;NAKANO, KOJI;FUJIWARA, KENJI;TAKESHITA, TERUO |